Samsung Semiconductor, Inc. M474A1K43DB1-CVF | 搜芯易Sourcengine

Samsung Semiconductor, Inc. M474A1K43DB1-CVF

生命周期状态
Contact Mfr
REACH
REACH compliant
说明
DRAM Module DDR4 8Gbyte
类别
Semiconductors Memory ICs DRAMs DDR4 DRAM MODULE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

I/O Type
COMMON
Technology
CMOS
Width (mm)
3.6
Access Mode
SINGLE BANK PAGE BURST
Length (mm)
69.6
JESD-30 Code
R-XDMA-N260
Memory Width
72
Package Code
DIMM
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
NO LEAD
Memory IC Type
DDR4 DRAM MODULE
Operating Mode
SYNCHRONOUS
Refresh Cycles
8192
Number of Ports
1
Terminal Position
DUAL
Memory Organization
1GX72
Number of Functions
1
Number of Terminals
260
Terminal Pitch (mm)
0.5
Number of Words Code
1G
Memory Density (bits)
77309411328
Package Body Material
UNSPECIFIED
Output Characteristics
3-STATE
Seated Height-Max (mm)
30
Supply Voltage-Max (V)
1.26
Supply Voltage-Min (V)
1.14
Supply Voltage-Nom (V)
1.2
Number of Words (words)
1073741824
Sequential Burst Length
4,8
Standby Current-Max (A)
0.198
Supply Current-Max (mA)
1395
Interleaved Burst Length
4,8
Package Equivalence Code
DIMM260,20
Operating Temperature-Max (Cel)
125
Operating Temperature-Min (Cel)
-20