Samsung Semiconductor, Inc. M470L6524GL0-CB3 | 搜芯易Sourcengine

Samsung Semiconductor, Inc. M470L6524GL0-CB3

生命周期状态
Discontinued
说明
DDR1 DRAM Module, 64MX64, 0.6ns, CMOS
类别
Semiconductors Memory ICs DRAMs DDR1 DRAM MODULE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

Length
67.6 mm
Technology
CMOS
Access Mode
MULTI BANK PAGE BURST
JESD-30 Code
R-XDMA-N200
Memory Width
64
Organization
64MX64
Package Code
DIMM
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
NO LEAD
Memory Density
4294967296 bit
Memory IC Type
DDR1 DRAM MODULE
Operating Mode
SYNCHRONOUS
Terminal Pitch
0.6 mm
Access Time-Max
0.6 ns
Number of Ports
1
Number of Words
67108864 words
Seated Height-Max
31.9 mm
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Additional Feature
AUTO/SELF REFRESH
Number of Functions
1
Number of Terminals
200
Number of Words Code
64M
Package Body Material
UNSPECIFIED
Operating Temperature-Max
70 Cel
Operating Temperature-Min
0 Cel
Supply Voltage-Max (Vsup)
2.7 V
Supply Voltage-Min (Vsup)
2.3 V
Supply Voltage-Nom (Vsup)
2.5 V