Samsung Semiconductor, Inc. M470L6524BN0-CB0 | 搜芯易Sourcengine

Samsung Semiconductor, Inc. M470L6524BN0-CB0

生命周期状态
Discontinued
REACH
REACH compliant
说明
Cache DRAM Module, 64MX64, 0.75ns, CMOS, PDMA200
类别
Semiconductors Memory ICs DRAMs CACHE DRAM MODULE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-PDMA-N200
Memory Width
64
Organization
64MX64
Package Code
DIMM
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
NO LEAD
Memory Density
4294967296 bit
Memory IC Type
CACHE DRAM MODULE
Refresh Cycles
8192
Terminal Pitch
0.6 mm
Access Time-Max
0.75 ns
Number of Words
67108864 words
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Supply Current-Max
1640 mA
Number of Terminals
200
Number of Words Code
64M
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Package Equivalence Code
DIMM200,24
Operating Temperature-Max
70 Cel
Operating Temperature-Min
0 Cel
Supply Voltage-Nom (Vsup)
2.5 V
Clock Frequency-Max (fCLK)
133 MHz
Moisture Sensitivity Level
1