Samsung Semiconductor, Inc. M470L1714BT0-LB0 | 搜芯易Sourcengine

Samsung Semiconductor, Inc. M470L1714BT0-LB0

生命周期状态
Discontinued
说明
DDR1 DRAM Module, 16MX64, 0.75ns, CMOS
类别
Semiconductors Memory ICs DRAMs DDR1 DRAM MODULE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.32
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
Access Mode
FOUR BANK PAGE BURST
JESD-30 Code
R-XZMA-N200
Memory Width
64
Organization
16MX64
Package Code
DIMM
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
NO LEAD
Memory Density
1073741824 bit
Memory IC Type
DDR1 DRAM MODULE
Operating Mode
SYNCHRONOUS
Refresh Cycles
4096
Terminal Pitch
0.6 mm
Access Time-Max
0.75 ns
Number of Ports
1
Number of Words
16777216 words
Temperature Grade
COMMERCIAL
Terminal Position
ZIG-ZAG
Additional Feature
AUTO/SELF REFRESH
Supply Current-Max
1820 mA
Number of Functions
1
Number of Terminals
200
Standby Current-Max
0.34 Amp
Number of Words Code
16M
Qualification Status
Not Qualified
Package Body Material
UNSPECIFIED
Output Characteristics
3-STATE
Package Equivalence Code
DIMM200,24
Operating Temperature-Max
70 Cel
Operating Temperature-Min
0 Cel
Supply Voltage-Max (Vsup)
2.7 V
Supply Voltage-Min (Vsup)
2.3 V
Supply Voltage-Nom (Vsup)
2.5 V
Clock Frequency-Max (fCLK)
133 MHz
Moisture Sensitivity Level
1