M395T5663FB4-CE68
Samsung Semiconductor, Inc.
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明DDR2 DRAM Module, 256MX72, CMOS
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- Length133.35 mm
- I/O TypeCOMMON
- TechnologyCMOS
- Access ModeDUAL BANK PAGE BURST
- JESD-30 CodeR-XDMA-N204
- Memory Width72
- Organization256MX72
- Package CodeDIMM
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleMICROELECTRONIC ASSEMBLY Meter
- Surface MountNO
- Terminal FormNO LEAD
- Memory Density19327352832 bit
- Memory IC TypeDDR2 DRAM MODULE
- Operating ModeSYNCHRONOUS
- Refresh Cycles8192
- Terminal Pitch1 mm
- Number of Ports1
- Number of Words268435456 words
- Seated Height-Max30.5 mm
- Temperature GradeOTHER
- Terminal PositionDUAL
- Additional FeatureAUTO/SELF REFRESH
- Supply Current-Max4895 mA
- Number of Functions1
- Number of Terminals204
- Number of Words Code256M
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Output Characteristics3-STATE
- Package Equivalence CodeDIMM240,40
- Operating Temperature-Max95 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Max (Vsup)1.9 V
- Supply Voltage-Min (Vsup)1.7 V
- Supply Voltage-Nom (Vsup)1.8 V
- Clock Frequency-Max (fCLK)333 MHz
- Moisture Sensitivity Level2
- Peak Reflow Temperature (Cel)260
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M395T5663FB4-CE68