Samsung Semiconductor, Inc. M393T5660AZA-D5 | 搜芯易Sourcengine

Samsung Semiconductor, Inc. M393T5660AZA-D5

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Cache DRAM Module, 256MX72, 0.5ns, CMOS, PDMA240
类别
Semiconductors Memory ICs DRAMs CACHE DRAM MODULE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-PDMA-N240
Memory Width
72
Organization
256MX72
Package Code
DIMM
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
NO LEAD
Memory Density
19327352832 bit
Memory IC Type
CACHE DRAM MODULE
Refresh Cycles
8192
Terminal Pitch
1 mm
Access Time-Max
0.5 ns
Number of Words
268435456 words
Terminal Finish
MATTE TIN
Temperature Grade
OTHER
Terminal Position
DUAL
Supply Current-Max
5750 mA
Number of Terminals
240
Standby Current-Max
0.79 Amp
Number of Words Code
256M
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Package Equivalence Code
DIMM240,40
Operating Temperature-Max
95 Cel
Operating Temperature-Min
0 Cel
Supply Voltage-Nom (Vsup)
1.8 V
Clock Frequency-Max (fCLK)
267 MHz
Moisture Sensitivity Level
1