HARRIS SEMICONDUCTOR M38510/26101BXX | 搜芯易Sourcengine

HARRIS SEMICONDUCTOR M38510/26101BXX

生命周期状态
Discontinued
说明
EEPROM, 32KX8, 350ns, Parallel, CMOS
类别
Semiconductors Memory ICs EEPROMs EEPROM

ECCN
3A001.a.2.c
ECCN Governance
EAR
HTS Code
8542.32.00.51
SB Code
8542.32.00.50

Technology
CMOS
JESD-30 Code
R-XDIP-T28
Memory Width
8
Package Code
DIP
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Memory IC Type
EEPROM
Operating Mode
ASYNCHRONOUS
Parallel/Serial
PARALLEL
DLA Qualification
Not Qualified
Temperature Grade
MILITARY
Terminal Position
DUAL
Memory Organization
32KX8
Number of Functions
1
Number of Terminals
28
Access Time-Max (ns)
350
Number of Words Code
32K
Memory Density (bits)
262144
Package Body Material
UNSPECIFIED
Supply Voltage-Max (V)
5.5
Supply Voltage-Min (V)
4.5
Supply Voltage-Nom (V)
5
Number of Words (words)
32768
Programming Voltage (V)
5
Operating Temperature-Max (Cel)
125
Operating Temperature-Min (Cel)
-55
Write Cycle Time-Max (tWC) (ms)
10