Samsung Semiconductor, Inc. M378B5673GB0-MA0 | 搜芯易Sourcengine

Samsung Semiconductor, Inc. M378B5673GB0-MA0

生命周期状态
Discontinued
说明
DDR3 DRAM Module, 256MX64, 0.195ns, CMOS
类别
Semiconductors Memory ICs DRAMs DDR3 DRAM MODULE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

Length
133.35 mm
Technology
CMOS
Access Mode
DUAL BANK PAGE BURST
JESD-30 Code
R-XDMA-N240
Memory Width
64
Organization
256MX64
Package Code
DIMM
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
NO LEAD
Memory Density
17179869184 bit
Memory IC Type
DDR3 DRAM MODULE
Operating Mode
SYNCHRONOUS
Terminal Pitch
1 mm
Access Time-Max
0.195 ns
Number of Ports
1
Number of Words
268435456 words
Seated Height-Max
30.15 mm
Temperature Grade
OTHER
Terminal Position
DUAL
Additional Feature
AUTO/SELF REFRESH
Number of Functions
1
Number of Terminals
240
Number of Words Code
256M
Package Body Material
UNSPECIFIED
Operating Temperature-Max
95 Cel
Operating Temperature-Min
0 Cel
Supply Voltage-Max (Vsup)
1.575 V
Supply Voltage-Min (Vsup)
1.425 V
Supply Voltage-Nom (Vsup)
1.5 V