Samsung Semiconductor, Inc. M378A1G43DB0-CPB | 搜芯易Sourcengine

Samsung Semiconductor, Inc. M378A1G43DB0-CPB

生命周期状态
Active-Unconfirmed
RoHS
符合RoHS标准
REACH
REACH compliant
说明
DDR DRAM Module, 1GX64, 0.18ns, CMOS
类别
Semiconductors Memory ICs DRAMs DDR DRAM MODULE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

Width
3.9 mm
Length
133.35 mm
I/O Type
COMMON
Technology
CMOS
Access Mode
DUAL BANK PAGE BURST
JESD-30 Code
R-XDMA-N288
Memory Width
64
Organization
1GX64
Package Code
DIMM
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
NO LEAD
Memory Density
68719476736 bit
Memory IC Type
DDR DRAM MODULE
Operating Mode
SYNCHRONOUS
Refresh Cycles
8192
Access Time-Max
0.18 ns
Number of Ports
1
Number of Words
1073741824 words
Seated Height-Max
31.4 mm
Temperature Grade
OTHER
Terminal Position
DUAL
Additional Feature
AUTO/SELF REFRESH; WD-MAX
Supply Current-Max
1310 mA
Number of Functions
1
Number of Terminals
288
Standby Current-Max
0.12 Amp
Number of Words Code
1G
Qualification Status
Not Qualified
Package Body Material
UNSPECIFIED
Output Characteristics
3-STATE
Package Equivalence Code
DIMM288,33
Operating Temperature-Max
85 Cel
Operating Temperature-Min
0 Cel
Supply Voltage-Max (Vsup)
1.26 V
Supply Voltage-Min (Vsup)
1.14 V
Supply Voltage-Nom (Vsup)
1.2 V
Clock Frequency-Max (fCLK)
1066 MHz