M2V64S50ETP-6I
ELPIDA MEMORY INC
- 生命周期状态Discontinued
- 说明Synchronous DRAM, 2MX32, 5.4ns, CMOS, PDSO86
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- TechnologyCMOS
- Access ModeFOUR BANK PAGE BURST
- JESD-30 CodeR-PDSO-G86
- Memory Width32
- Organization2MX32
- Package CodeSOP
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- Memory Density67108864 bit
- Memory IC TypeSYNCHRONOUS DRAM
- Operating ModeSYNCHRONOUS
- Access Time-Max5.4 ns
- Number of Ports1
- Number of Words2097152 words
- Temperature GradeINDUSTRIAL
- Terminal PositionDUAL
- Additional FeatureAUTO/SELF REFRESH
- Number of Functions1
- Number of Terminals86
- Number of Words Code2M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Operating Temperature-Max85 Cel
- Operating Temperature-Min-40 Cel
- Supply Voltage-Max (Vsup)3.6 V
- Supply Voltage-Min (Vsup)3 V
- Supply Voltage-Nom (Vsup)3.3 V
- Moisture Sensitivity Level1
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M2V64S50ETP-6I