Nanya Technology Corporation M2S8G64CB8HB5N-DI | 搜芯易Sourcengine

Nanya Technology Corporation M2S8G64CB8HB5N-DI

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
DDR3 DRAM Module, 1GX64, CMOS
类别
Semiconductors Memory ICs DRAMs DDR3 DRAM MODULE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

I/O Type
COMMON
Technology
CMOS
Width (mm)
3.8
Access Mode
MULTI BANK PAGE BURST
Length (mm)
67.6
JESD-30 Code
R-XZMA-N204
Memory Width
64
Package Code
ZMA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
NO LEAD
Memory IC Type
DDR3 DRAM MODULE
Operating Mode
SYNCHRONOUS
Number of Ports
1
Terminal Position
ZIG-ZAG
Additional Feature
AUTO/SELF REFRESH; WD-MAX
Memory Organization
1GX64
Number of Functions
1
Number of Terminals
204
Terminal Pitch (mm)
0.6
Number of Words Code
1G
Memory Density (bits)
68719476736
Package Body Material
UNSPECIFIED
Output Characteristics
3-STATE
Seated Height-Max (mm)
30.15
Supply Voltage-Max (V)
1.575
Supply Voltage-Min (V)
1.425
Supply Voltage-Nom (V)
1.5
Number of Words (words)
1073741824
Sequential Burst Length
8
Standby Current-Max (A)
0.44
Supply Current-Max (mA)
2798
Interleaved Burst Length
8
Clock Frequency-Max (MHz)
800
Operating Temperature-Max (Cel)
95
Operating Temperature-Min (Cel)
0