Nanya Technology Corporation M2S1G64CBH4B5P-BE | 搜芯易Sourcengine

Nanya Technology Corporation M2S1G64CBH4B5P-BE

生命周期状态
Active
RoHS
符合RoHS标准
说明
DDR3 DRAM Module, 128MX64, CMOS
类别
Semiconductors Memory ICs DRAMs DDR3 DRAM MODULE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

I/O Type
COMMON
Technology
CMOS
Width (mm)
2.7
Access Mode
SINGLE BANK PAGE BURST
Length (mm)
67.6
JESD-30 Code
R-XDMA-N204
Memory Width
64
Package Code
DIMM
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
NO LEAD
Memory IC Type
DDR3 DRAM MODULE
Operating Mode
SYNCHRONOUS
Number of Ports
1
Terminal Position
DUAL
Additional Feature
AUTO/SELF REFRESH; WD-MAX
Memory Organization
128MX64
Number of Functions
1
Number of Terminals
204
Terminal Pitch (mm)
0.6
Number of Words Code
128M
Memory Density (bits)
8589934592
Package Body Material
UNSPECIFIED
Seated Height-Max (mm)
30.5
Supply Voltage-Max (V)
1.575
Supply Voltage-Min (V)
1.425
Supply Voltage-Nom (V)
1.5
Number of Words (words)
134217728
Sequential Burst Length
8
Standby Current-Max (A)
0.053
Supply Current-Max (mA)
1650
Interleaved Burst Length
8
Package Equivalence Code
DIMM204,24
Clock Frequency-Max (MHz)
533
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
0