M2F8G64CB8HB9N-DI
Nanya Technology Corporation
- 生命周期状态Active
- RoHS符合RoHS标准
- 说明DDR3 DRAM Module, 1GX64, CMOS
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- I/O TypeCOMMON
- TechnologyCMOS
- Width (mm)5.6
- Access ModeMULTI BANK PAGE BURST
- Length (mm)133.35
- JESD-30 CodeR-XDMA-N240
- Memory Width64
- Package CodeDIMM
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleMICROELECTRONIC ASSEMBLY Meter
- Surface MountNO
- Terminal FormNO LEAD
- Memory IC TypeDDR3 DRAM MODULE
- Operating ModeSYNCHRONOUS
- Number of Ports1
- Terminal PositionDUAL
- Memory Organization1GX64
- Number of Functions1
- Number of Terminals240
- Terminal Pitch (mm)1
- Number of Words Code1G
- Memory Density (bits)68719476736
- Package Body MaterialUNSPECIFIED
- Output Characteristics3-STATE
- Seated Height-Max (mm)30.5
- Supply Voltage-Max (V)1.575
- Supply Voltage-Min (V)1.425
- Supply Voltage-Nom (V)1.5
- Number of Words (words)1073741824
- Sequential Burst Length8
- Standby Current-Max (A)0.44
- Supply Current-Max (mA)3010
- Interleaved Burst Length8
- Clock Frequency-Max (MHz)800
- Operating Temperature-Max (Cel)95
- Operating Temperature-Min (Cel)0
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M2F8G64CB8HB9N-DI