INNODISK CORP M1SF-12MC4103-J | 搜芯易Sourcengine

INNODISK CORP M1SF-12MC4103-J

生命周期状态
Contact Mfr
RoHS
符合RoHS标准
说明
DDR1 DRAM Module, 64MX64, 0.7ns, CMOS, PDMA200
类别
Semiconductors Memory ICs DRAMs DDR1 DRAM MODULE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

I/O Type
COMMON
Technology
CMOS
Width (mm)
3.8
Access Mode
SINGLE BANK PAGE BURST
Length (mm)
67.6
JESD-30 Code
R-XDMA-N200
Memory Width
64
Package Code
DIMM
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
NO LEAD
Memory IC Type
DDR1 DRAM MODULE
Operating Mode
SYNCHRONOUS
Number of Ports
1
Temperature Grade
OTHER
Terminal Position
DUAL
Additional Feature
SELF REFRESH, SEATED HGT-NOM, WD-MAX
Memory Organization
64MX64
Number of Functions
1
Number of Terminals
200
Terminal Pitch (mm)
0.6
Access Time-Max (ns)
0.7
Number of Words Code
64M
Memory Density (bits)
4294967296
Package Body Material
PLASTIC/EPOXY
Seated Height-Max (mm)
31.75
Supply Voltage-Max (V)
2.7
Supply Voltage-Min (V)
2.5
Supply Voltage-Nom (V)
2.6
Number of Words (words)
67108864
Sequential Burst Length
2,4,8
Standby Current-Max (A)
0.08
Supply Current-Max (mA)
1680
Interleaved Burst Length
2,4,8
Package Equivalence Code
DIMM200,24
Clock Frequency-Max (MHz)
200
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-20