M16U4G8512A-KJBG2Z
ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGY INC
- 生命周期状态Active-Unconfirmed
- RoHS符合RoHS标准
- 说明DDR4 DRAM, 512MX8, CMOS, PBGA78
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- I/O TypeCOMMON
- TechnologyCMOS
- Width (mm)7.5
- Access ModeMULTI BANK PAGE BURST
- Length (mm)10.5
- JESD-30 CodeR-PBGA-B78
- Memory Width8
- Package CodeVFBGA
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory IC TypeDDR4 DRAM
- Operating ModeSYNCHRONOUS
- Refresh Cycles8192
- Number of Ports1
- Terminal PositionBOTTOM
- Memory Organization512MX8
- Number of Functions1
- Number of Terminals78
- Terminal Pitch (mm)0.8
- Number of Words Code512M
- Memory Density (bits)4294967296
- Package Body MaterialPLASTIC/EPOXY
- Seated Height-Max (mm)1
- Supply Voltage-Max (V)1.26
- Supply Voltage-Min (V)1.14
- Supply Voltage-Nom (V)1.2
- Number of Words (words)536870912
- Sequential Burst Length8
- Standby Current-Max (A)0.035
- Supply Current-Max (mA)345
- Interleaved Burst Length8
- Package Equivalence CodeBGA78,9X13,32
- Clock Frequency-Max (MHz)1333
- Operating Temperature-Max (Cel)95
- Operating Temperature-Min (Cel)0
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M16U4G8512A-KJBG2Z