M15T4G16256A-BDBVAG2L
ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGY INC
- 生命周期状态Active
- RoHS符合RoHS标准
- 说明DDR3L DRAM, 256MX16, CMOS, PBGA96
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- I/O TypeCOMMON
- TechnologyCMOS
- Width (mm)7.5
- Access ModeMULTI BANK PAGE BURST
- Length (mm)13
- JESD-30 CodeR-PBGA-B96
- Memory Width16
- Package CodeVFBGA
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory IC TypeDDR3L DRAM
- Operating ModeSYNCHRONOUS
- Number of Ports1
- Terminal PositionBOTTOM
- Additional FeatureAUTO/SELF REFRESH, ALSO OPERATES AT 1.5V SUPPLY
- Memory Organization256MX16
- Number of Functions1
- Number of Terminals96
- Terminal Pitch (mm)0.8
- Number of Words Code256M
- Memory Density (bits)4294967296
- Package Body MaterialPLASTIC/EPOXY
- Seated Height-Max (mm)1
- Supply Voltage-Max (V)1.45
- Supply Voltage-Min (V)1.283
- Supply Voltage-Nom (V)1.35
- Number of Words (words)268435456
- Sequential Burst Length8
- Standby Current-Max (A)0.04
- Supply Current-Max (mA)440
- Interleaved Burst Length8
- Package Equivalence CodeBGA96,9X16,32
- Clock Frequency-Max (MHz)800
- Operating Temperature-Max (Cel)85
- Operating Temperature-Min (Cel)-40
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