M14D5121632A-1.8BBG2A
ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGY INC
- 生命周期状态Contact Mfr
- RoHS符合RoHS标准
- 说明DDR DRAM, 32MX16, 0.35ns, CMOS, PBGA84
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.28
- SB Code8542.32.00.15
- Width8 mm
- Length12.5 mm
- TechnologyCMOS
- Access ModeFOUR BANK PAGE BURST
- JESD-30 CodeR-PBGA-B84
- Memory Width16
- Organization32MX16
- Package CodeVFBGA
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density536870912 bit
- Memory IC TypeDDR DRAM
- Operating ModeSYNCHRONOUS
- Terminal Pitch0.8 mm
- Access Time-Max0.35 ns
- Number of Ports1
- Number of Words33554432 words
- Seated Height-Max1 mm
- Temperature GradeOTHER
- Terminal PositionBOTTOM
- Additional FeatureAUTO/SELF REFRESH
- Number of Functions1
- Number of Terminals84
- Number of Words Code32M
- Package Body MaterialPLASTIC/EPOXY
- Operating Temperature-Max85 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Max (Vsup)1.9 V
- Supply Voltage-Min (Vsup)1.7 V
- Supply Voltage-Nom (Vsup)1.8 V
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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