M13S64164A-5TG2C
ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGY INC
- 生命周期状态Contact Mfr
- RoHS符合RoHS标准
- 说明DDR DRAM, 4MX16, 0.7ns, CMOS, PDSO66
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- TechnologyCMOS
- Width (mm)10.16
- Access ModeFOUR BANK PAGE BURST
- Length (mm)22.22
- JESD-30 CodeR-PDSO-G66
- Memory Width16
- Package CodeTSOP2
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE, THIN PROFILE Meter
- Surface MountYES
- Terminal FormGULL WING
- Memory IC TypeDDR DRAM
- Operating ModeSYNCHRONOUS
- Number of Ports1
- Temperature GradeCOMMERCIAL
- Terminal PositionDUAL
- Additional FeatureAUTO/SELF REFRESH
- Memory Organization4MX16
- Number of Functions1
- Number of Terminals66
- Terminal Pitch (mm)0.65
- Access Time-Max (ns)0.7
- Number of Words Code4M
- Memory Density (bits)67108864
- Package Body MaterialPLASTIC/EPOXY
- Seated Height-Max (mm)1.2
- Supply Voltage-Max (V)2.7
- Supply Voltage-Min (V)2.3
- Supply Voltage-Nom (V)2.5
- Number of Words (words)4194304
- Operating Temperature-Max (Cel)70
- Operating Temperature-Min (Cel)0
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M13S64164A-5TG2C