M13S128324A-6BIG2M
ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGY INC
- 生命周期状态Active
- 说明DDR1 DRAM, 4MX32, 0.7ns, CMOS, PBGA144
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- TechnologyCMOS
- Width (mm)12
- Access ModeFOUR BANK PAGE BURST
- Length (mm)12
- JESD-30 CodeS-PBGA-B144
- Memory Width32
- Package CodeLFBGA
- Self RefreshYES
- Package ShapeSQUARE
- Package StyleGRID ARRAY, LOW PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory IC TypeDDR1 DRAM
- Operating ModeSYNCHRONOUS
- Number of Ports1
- Temperature GradeINDUSTRIAL
- Terminal PositionBOTTOM
- Additional FeatureAUTO/SELF REFRESH
- Memory Organization4MX32
- Number of Functions1
- Number of Terminals144
- Terminal Pitch (mm)0.8
- Access Time-Max (ns)0.7
- Number of Words Code4M
- Memory Density (bits)134217728
- Package Body MaterialPLASTIC/EPOXY
- Seated Height-Max (mm)1.4
- Supply Voltage-Max (V)2.625
- Supply Voltage-Min (V)2.357
- Supply Voltage-Nom (V)2.5
- Number of Words (words)4194304
- Operating Temperature-Max (Cel)85
- Operating Temperature-Min (Cel)-40
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M13S128324A-6BIG2M