M12L2561616A-6TVG2S
ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGY INC
- 生命周期状态Active
- RoHS符合RoHS标准
- 说明Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.24
- SB Code8542.32.00.15
- TechnologyCMOS
- Width (mm)10.16
- Access ModeFOUR BANK PAGE BURST
- Length (mm)22.22
- JESD-30 CodeR-PDSO-G54
- Memory Width16
- Package CodeTSOP2
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE, THIN PROFILE Meter
- Surface MountYES
- Terminal FormGULL WING
- Memory IC TypeSYNCHRONOUS DRAM
- Operating ModeSYNCHRONOUS
- Number of Ports1
- Temperature GradeINDUSTRIAL
- Terminal PositionDUAL
- Additional FeatureAUTO/SELF REFRESH
- Memory Organization16MX16
- Number of Functions1
- Number of Terminals54
- Terminal Pitch (mm)0.8
- Access Time-Max (ns)5.4
- Number of Words Code16M
- Memory Density (bits)268435456
- Package Body MaterialPLASTIC/EPOXY
- Seated Height-Max (mm)1.2
- Supply Voltage-Max (V)3.6
- Supply Voltage-Min (V)3
- Supply Voltage-Nom (V)3.3
- Number of Words (words)16777216
- Operating Temperature-Max (Cel)85
- Operating Temperature-Min (Cel)-40
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M12L2561616A-6TVG2S