M12L2561616A-5BG2A
ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGY INC
- 生命周期状态Contact Mfr
- 说明Synchronous DRAM, 16MX16, 5ns, CMOS, PBGA54
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.24
- SB Code8542.32.00.15
- TechnologyCMOS
- Width (mm)8
- Access ModeFOUR BANK PAGE BURST
- Length (mm)8
- JESD-30 CodeS-PBGA-B54
- Memory Width16
- Package CodeVFBGA
- Self RefreshYES
- Package ShapeSQUARE
- Package StyleGRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory IC TypeSYNCHRONOUS DRAM
- Operating ModeSYNCHRONOUS
- Number of Ports1
- Temperature GradeCOMMERCIAL
- Terminal PositionBOTTOM
- Additional FeatureAUTO/SELF REFRESH
- Memory Organization16MX16
- Number of Functions1
- Number of Terminals54
- Terminal Pitch (mm)0.8
- Access Time-Max (ns)5
- Number of Words Code16M
- Memory Density (bits)268435456
- Package Body MaterialPLASTIC/EPOXY
- Seated Height-Max (mm)1
- Supply Voltage-Max (V)3.6
- Supply Voltage-Min (V)3
- Supply Voltage-Nom (V)3.3
- Number of Words (words)16777216
- Operating Temperature-Max (Cel)70
- Operating Temperature-Min (Cel)0
M12L2561616A-5BG2A有0家供应商货源可供购买或竞价
提交询价
您的询价单将直接发送给我们的销售专家: Pari
提交询价
M12L2561616A-5BG2A