POWERTECH INC LC-1002 | 搜芯易Sourcengine

POWERTECH INC LC-1002

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 50A I(C), 450V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

VCEsat-Max
2.2 V
JESD-30 Code
R-MDFM-P3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
Case Connection
ISOLATED
Terminal Position
DUAL
Additional Feature
FET DRIVING BIPOLAR TRANSISTOR IN HYBRID CONFIGURATION
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Turn-on Time-Nom (ton)
900 ns
Gate-emitter Voltage-Max
20 V
Operating Temperature-Max
175 Cel
Collector Current-Max (IC)
50 A
Transistor Element Material
SILICON
Gate-emitter Thr Voltage-Max
4.7 V
Collector-emitter Voltage-Max
450 V
Power Dissipation Ambient-Max
350 W