ONSEMI LA733P | 搜芯易Sourcengine

ONSEMI LA733P

生命周期状态
EOL
说明
Trans GP BJT PNP 48V 0.1A Box
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
O-PBCY-T3
Configuration
SINGLE
JEDEC-95 Code
TO-92
JESD-609 Code
e0
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Finish
TIN LEAD
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
PNP
Highest Frequency Band
VERY HIGH FREQUENCY BAND
Transistor Application
AMPLIFIER
DC Current Gain-Min (hFE)
200
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
0.1 A
Power Dissipation-Max (Abs)
0.35 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
48 V
Peak Reflow Temperature (Cel)
235
Transition Frequency-Nom (fT)
100 MHz
Collector-base Capacitance-Max
7 pF