OSI LASER DIODE INC LA410 | 搜芯易Sourcengine

OSI LASER DIODE INC LA410

生命周期状态
Discontinued
说明
Laser Diode, 850nm
类别
Semiconductors Optoelectronics Laser Diodes LASER DIODE

ECCN
3A001.a.2.b
ECCN Governance
EAR

Mounting Feature
THROUGH HOLE MOUNT
Peak Wavelength (nm)
850
Response Time-Max (s)
5.0E-10
Semiconductor Material
GaAlAs
Forward Current-Max (A)
40
Forward Voltage-Max (V)
31
Spectral Bandwidth (nm)
3.5
Optoelectronic Device Type
LASER DIODE
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
-195