L9D264M80SBG5E3
LOGIC DEVICES INC
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明DDR DRAM Module, 64MX80, 0.45ns, CMOS, PBGA255
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeS-PBGA-B255
- Memory Width80
- Package CodeBGA
- Package ShapeSQUARE
- Package StyleGRID ARRAY Meter
- Surface MountYES
- Terminal FormBALL
- Memory IC TypeDDR DRAM MODULE
- Refresh Cycles8192
- DLA QualificationNot Qualified
- Temperature GradeINDUSTRIAL
- Terminal PositionBOTTOM
- Memory Organization64MX80
- Number of Terminals255
- Terminal Pitch (mm)1.27
- Access Time-Max (ns)0.45
- Number of Words Code64M
- Memory Density (bits)5368709120
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Supply Voltage-Nom (V)1.8
- Number of Words (words)67108864
- Standby Current-Max (A)0.035
- Supply Current-Max (mA)1150
- Package Equivalence CodeBGA255,16X16,50
- Clock Frequency-Max (MHz)333
- Operating Temperature-Max (Cel)105
- Operating Temperature-Min (Cel)-40
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L9D264M80SBG5E3