LOGIC DEVICES INC L9D112G80BG4I10 | 搜芯易Sourcengine

LOGIC DEVICES INC L9D112G80BG4I10

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
DDR DRAM Module, 16MX16, 0.8ns, CMOS
类别
Semiconductors Memory ICs DRAMs DDR DRAM MODULE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.24
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
Width (mm)
25
Access Mode
FOUR BANK PAGE BURST
Length (mm)
25
JESD-30 Code
S-XDMA-N219
Memory Width
16
Package Code
BGA
Self Refresh
YES
Package Shape
SQUARE
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
NO LEAD
Memory IC Type
DDR DRAM MODULE
Operating Mode
SYNCHRONOUS
Refresh Cycles
8192
Number of Ports
1
DLA Qualification
Not Qualified
Temperature Grade
INDUSTRIAL
Terminal Position
DUAL
Additional Feature
AUTO/SELF REFRESH
Memory Organization
16MX16
Number of Functions
1
Number of Terminals
219
Terminal Pitch (mm)
1.27
Access Time-Max (ns)
0.8
Number of Words Code
16M
Memory Density (bits)
268435456
Package Body Material
UNSPECIFIED
Output Characteristics
3-STATE
Seated Height-Max (mm)
2.5
Supply Voltage-Max (V)
2.7
Supply Voltage-Min (V)
2.3
Supply Voltage-Nom (V)
2.5
Number of Words (words)
16777216
Sequential Burst Length
2,4,8
Standby Current-Max (A)
0.025
Supply Current-Max (mA)
1700
Interleaved Burst Length
2,4,8
Package Equivalence Code
BGA219,16X16,50
Clock Frequency-Max (MHz)
100
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40