KVR16N11K2/16
Kingston Technology Company, Inc.
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明DDR3 DRAM Module, 2GX64, 0.255ns, CMOS
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8473.30.11.40
- SB Code8542.32.00.23
- I/O TypeCOMMON
- TechnologyCMOS
- Access ModeMULTI BANK PAGE BURST
- Length (mm)133.35
- JESD-30 CodeR-XDMA-N240
- Memory Width64
- Package CodeDIMM
- Package ShapeRECTANGULAR
- Package StyleMICROELECTRONIC ASSEMBLY Meter
- Surface MountNO
- Terminal FormNO LEAD
- Memory IC TypeDDR3 DRAM MODULE
- Operating ModeSYNCHRONOUS
- Refresh Cycles8192
- Number of Ports1
- DLA QualificationNot Qualified
- Temperature GradeOTHER
- Terminal PositionDUAL
- Additional FeaturePROGRAMMABLE CAS LATENCY; SEATED HGT-NOM
- Memory Organization2GX64
- Number of Functions1
- Number of Terminals240
- Terminal Pitch (mm)1
- Access Time-Max (ns)0.255
- Number of Words Code2G
- Memory Density (bits)137438953472
- Package Body MaterialUNSPECIFIED
- Output Characteristics3-STATE
- Seated Height-Max (mm)18.75
- Supply Voltage-Max (V)1.575
- Supply Voltage-Min (V)1.425
- Supply Voltage-Nom (V)1.5
- Number of Words (words)2147483648
- Package Equivalence CodeDIMM240,40
- Clock Frequency-Max (MHz)667
- Operating Temperature-Max (Cel)85
- Operating Temperature-Min (Cel)0
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KVR16N11K2/16