ONSEMI KSH31C | 搜芯易Sourcengine

ONSEMI KSH31C

生命周期状态
Discontinued
REACH
REACH compliant
说明
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

VCEsat-Max
1.2 V
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Transistor Application
AMPLIFIER
DC Current Gain-Min (hFE)
10
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
3 A
Power Dissipation-Max (Abs)
15 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
100 V
Power Dissipation Ambient-Max
1.56 W
Transition Frequency-Nom (fT)
3 MHz