Samsung Semiconductor, Inc. KSH29C-I | 搜芯易Sourcengine

Samsung Semiconductor, Inc. KSH29C-I

生命周期状态
Discontinued
说明
Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
SWITCHING
JESD-30 Code
R-PSIP-T3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
VCEsat-Max (V)
0.7
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
15
Power Dissipation-Max (W)
15
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
1
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
100
Power Dissipation Ambient-Max (W)
15
Transition Frequency-Nom (fT) (MHz)
3