Samsung Semiconductor, Inc. KSH127-TF | 搜芯易Sourcengine

Samsung Semiconductor, Inc. KSH127-TF

生命周期状态
Discontinued
说明
Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

VCEsat-Max
4 V
JESD-30 Code
R-PSSO-G2
Configuration
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
PNP
DC Current Gain-Min (hFE)
100
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
8 A
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
100 V
Power Dissipation Ambient-Max
20 W
Collector-base Capacitance-Max
300 pF