Samsung Semiconductor, Inc. KSC5035 | 搜芯易Sourcengine

Samsung Semiconductor, Inc. KSC5035

生命周期状态
Discontinued
说明
RF Power Bipolar Transistor, 1-Element, Silicon, NPN, TO-126
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE
JEDEC-95 Code
TO-126
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Case Connection
ISOLATED
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
40
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
0.3 A
Power Dissipation-Max (Abs)
8 W
Transistor Element Material
SILICON
Transition Frequency-Nom (fT)
500 MHz