Samsung Semiconductor, Inc. KM736V947H-8 | 搜芯易Sourcengine

Samsung Semiconductor, Inc. KM736V947H-8

生命周期状态
Discontinued
说明
ZBT SRAM, 512KX36, 8.5ns, CMOS, PBGA119
类别
Semiconductors Memory ICs SRAMs ZBT SRAM

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
Width (mm)
14
Length (mm)
22
JESD-30 Code
R-PBGA-B119
Memory Width
36
Package Code
BGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e0
Memory IC Type
ZBT SRAM
Operating Mode
SYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
BOTTOM
Additional Feature
FLOW-THROUGH ARCHITECTURE
Memory Organization
512KX36
Number of Functions
1
Number of Terminals
119
Terminal Pitch (mm)
1.27
Access Time-Max (ns)
8.5
Number of Words Code
512K
Memory Density (bits)
18874368
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Supply Voltage-Max (V)
3.465
Supply Voltage-Min (V)
3.135
Supply Voltage-Nom (V)
3.3
Number of Words (words)
524288
Standby Current-Max (A)
0.03
Standby Voltage-Min (V)
3.14
Supply Current-Max (mA)
320
Package Equivalence Code
BGA119,7X17,50
Clock Frequency-Max (MHz)
100
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0