KM48V8100BS-L6
Samsung Semiconductor, Inc.
- 生命周期状态Discontinued
- 说明Fast Page DRAM, 8MX8, 60ns, CMOS, PDSO32
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- Width10.16 mm
- Length20.95 mm
- I/O TypeCOMMON
- TechnologyCMOS
- Access ModeFAST PAGE
- JESD-30 CodeR-PDSO-G32
- Memory Width8
- Organization8MX8
- Package CodeTSOP2
- Self RefreshYES
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE, THIN PROFILE Meter
- Surface MountYES
- Terminal FormGULL WING
- Memory Density67108864 bit
- Memory IC TypeFAST PAGE DRAM
- Operating ModeASYNCHRONOUS
- Refresh Cycles4096
- Terminal Pitch1.27 mm
- Access Time-Max60 ns
- Number of Ports1
- Number of Words8388608 words
- Terminal FinishTIN LEAD
- Seated Height-Max1.2 mm
- Temperature GradeCOMMERCIAL
- Terminal PositionDUAL
- Additional FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH
- Supply Current-Max110 mA
- Number of Functions1
- Number of Terminals32
- Standby Current-Max0.0003 Amp
- Number of Words Code8M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Package Equivalence CodeTSOP32,.46
- Operating Temperature-Max70 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Max (Vsup)3.6 V
- Supply Voltage-Min (Vsup)3 V
- Supply Voltage-Nom (Vsup)3.3 V
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KM48V8100BS-L6