KM44V16000J-5
Samsung Semiconductor, Inc.
- 生命周期状态Discontinued
- 说明Fast Page DRAM, 16MX4, 50ns, CMOS, PDSO34
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- Width12.7 mm
- Length22.23 mm
- I/O TypeCOMMON
- TechnologyCMOS
- Access ModeFAST PAGE
- JESD-30 CodeR-PDSO-J34
- Memory Width4
- Organization16MX4
- Package CodeSOJ
- Self RefreshNO
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormJ BEND
- Memory Density67108864 bit
- Memory IC TypeFAST PAGE DRAM
- Operating ModeASYNCHRONOUS
- Refresh Cycles8192
- Terminal Pitch1.27 mm
- Access Time-Max50 ns
- Number of Ports1
- Number of Words16777216 words
- Terminal FinishTin/Lead (Sn/Pb)
- Seated Height-Max3.76 mm
- Temperature GradeCOMMERCIAL
- Terminal PositionDUAL
- Additional FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
- Supply Current-Max120 mA
- Number of Functions1
- Number of Terminals34
- Standby Current-Max0.0005 Amp
- Number of Words Code16M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Package Equivalence CodeSOJ34,.54
- Operating Temperature-Max70 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Max (Vsup)3.6 V
- Supply Voltage-Min (Vsup)3 V
- Supply Voltage-Nom (Vsup)3.3 V
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