KM44C1000DT-6
Samsung Semiconductor, Inc.
- 生命周期状态Discontinued
- 说明Fast Page DRAM, 1MX4, 60ns, CMOS, PDSO20
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyCMOS
- Width (mm)7.62
- Access ModeFAST PAGE
- Length (mm)17.14
- JESD-30 CodeR-PDSO-G20
- Memory Width4
- Package CodeTSOP2
- Self RefreshNO
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE, THIN PROFILE Meter
- Surface MountYES
- Terminal FormGULL WING
- J-STD-609 Codee0
- Memory IC TypeFAST PAGE DRAM
- Operating ModeASYNCHRONOUS
- Refresh Cycles1024
- Number of Ports1
- Terminal FinishTIN LEAD
- DLA QualificationNot Qualified
- Temperature GradeCOMMERCIAL
- Terminal PositionDUAL
- Additional FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
- Memory Organization1MX4
- Number of Functions1
- Number of Terminals20
- Terminal Pitch (mm)1.27
- Access Time-Max (ns)60
- Number of Words Code1M
- Memory Density (bits)4194304
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Seated Height-Max (mm)1.2
- Supply Voltage-Max (V)5.5
- Supply Voltage-Min (V)4.5
- Supply Voltage-Nom (V)5
- Number of Words (words)1048576
- Standby Current-Max (A)0.001
- Supply Current-Max (mA)75
- Package Equivalence CodeTSOP20/26,.36
- Operating Temperature-Max (Cel)70
- Operating Temperature-Min (Cel)0
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KM44C1000DT-6