Samsung Semiconductor, Inc. KM41V4000DT-L6 | 搜芯易Sourcengine

Samsung Semiconductor, Inc. KM41V4000DT-L6

生命周期状态
Discontinued
说明
Fast Page DRAM, 4MX1, 60ns, CMOS, PDSO20
类别
Semiconductors Memory ICs DRAMs FAST PAGE DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

I/O Type
SEPARATE
Technology
CMOS
Width (mm)
7.62
Access Mode
FAST PAGE
Length (mm)
17.14
JESD-30 Code
R-PDSO-G20
Memory Width
1
Package Code
TSOP2
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e0
Memory IC Type
FAST PAGE DRAM
Operating Mode
ASYNCHRONOUS
Refresh Cycles
1024
Number of Ports
1
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Additional Feature
RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH
Memory Organization
4MX1
Number of Functions
1
Number of Terminals
20
Terminal Pitch (mm)
1.27
Access Time-Max (ns)
60
Number of Words Code
4M
Memory Density (bits)
4194304
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
1.2
Supply Voltage-Max (V)
3.6
Supply Voltage-Min (V)
3
Supply Voltage-Nom (V)
3.3
Number of Words (words)
4194304
Standby Current-Max (A)
0.0001
Supply Current-Max (mA)
60
Package Equivalence Code
TSOP20/26,.36
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0