KM41C466J-7
Samsung Semiconductor, Inc.
- 生命周期状态Discontinued
- 说明Static Column DRAM, 64KX4, 70ns, CMOS, PQCC18
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- Width7.366 mm
- Length12.445 mm
- I/O TypeCOMMON
- TechnologyCMOS
- Access ModeSTATIC COLUMN
- JESD-30 CodeR-PQCC-J18
- Memory Width4
- Organization64KX4
- Package CodeQCCJ
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleCHIP CARRIER Meter
- Surface MountYES
- Terminal FormJ BEND
- Memory Density262144 bit
- Memory IC TypeSTATIC COLUMN DRAM
- Operating ModeASYNCHRONOUS
- Refresh Cycles256
- Terminal Pitch1.27 mm
- Access Time-Max70 ns
- Number of Ports1
- Number of Words65536 words
- Terminal FinishTIN LEAD
- Seated Height-Max3.56 mm
- Temperature GradeCOMMERCIAL
- Terminal PositionQUAD
- Additional FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
- Supply Current-Max65 mA
- Number of Functions1
- Number of Terminals18
- Number of Words Code64K
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Package Equivalence CodeLDCC18,.33X.53
- Operating Temperature-Max70 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Max (Vsup)5.5 V
- Supply Voltage-Min (Vsup)4.5 V
- Supply Voltage-Nom (Vsup)5 V
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