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KM416RD8C-RM80

Samsung Semiconductor, Inc.

Samsung Semiconductor, Inc. KM416RD8C-RM80
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.02
  • SB Code
    8542.32.00.15
  • I/O Type
    COMMON
  • Technology
    CMOS
  • Width (mm)
    11.5
  • Access Mode
    BLOCK ORIENTED PROTOCOL
  • Length (mm)
    13.15
  • JESD-30 Code
    R-PBGA-B62
  • Memory Width
    16
  • Package Code
    VFBGA
  • Self Refresh
    YES
  • Package Shape
    RECTANGULAR
  • Package Style
    GRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
  • Surface Mount
    YES
  • Terminal Form
    BALL
  • J-STD-609 Code
    e0
  • Memory IC Type
    RAMBUS DRAM
  • Operating Mode
    ASYNCHRONOUS
  • Number of Ports
    1
  • Terminal Finish
    TIN LEAD
  • DLA Qualification
    Not Qualified
  • Terminal Position
    BOTTOM
  • Additional Feature
    SELF REFRESH
  • Memory Organization
    8MX16
  • Number of Functions
    1
  • Number of Terminals
    62
  • Terminal Pitch (mm)
    0.8
  • Number of Words Code
    8M
  • Memory Density (bits)
    134217728
  • Package Body Material
    PLASTIC/EPOXY
  • Output Characteristics
    3-STATE
  • Seated Height-Max (mm)
    1
  • Supply Voltage-Max (V)
    2.63
  • Supply Voltage-Min (V)
    2.37
  • Supply Voltage-Nom (V)
    2.5
  • Number of Words (words)
    8388608
  • Package Equivalence Code
    BGA62,12X9,40/32
  • Clock Frequency-Max (MHz)
    800

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KM416RD8C-RM80
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KM416RD8C-RM80