KM416RD8AD-RG60
Samsung Semiconductor, Inc.
- 生命周期状态Discontinued
- 说明Rambus DRAM, 8MX16, 53.3ns, CMOS, PBGA62
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyCMOS
- Width (mm)10.2
- Access ModeBLOCK ORIENTED PROTOCOL
- Length (mm)12
- JESD-30 CodeR-PBGA-B62
- Memory Width16
- Package CodeVBGA
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, VERY THIN PROFILE Meter
- Surface MountYES
- Terminal FormBALL
- J-STD-609 Codee0
- Memory IC TypeRAMBUS DRAM
- Operating ModeSYNCHRONOUS
- Reverse PinoutYES
- Number of Ports1
- Terminal FinishTIN LEAD
- DLA QualificationNot Qualified
- Terminal PositionBOTTOM
- Additional FeatureSELF CONTAINED REFRESH
- Memory Organization8MX16
- Number of Functions1
- Number of Terminals62
- Terminal Pitch (mm)0.8
- Access Time-Max (ns)53.3
- Number of Words Code8M
- Memory Density (bits)134217728
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Seated Height-Max (mm)1
- Supply Voltage-Max (V)2.63
- Supply Voltage-Min (V)2.37
- Supply Voltage-Nom (V)2.5
- Number of Words (words)8388608
- Package Equivalence CodeBGA62,12X9,40/32
- Clock Frequency-Max (MHz)600
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KM416RD8AD-RG60