Samsung Semiconductor, Inc. KM416RD4C-M80 | 搜芯易Sourcengine

Samsung Semiconductor, Inc. KM416RD4C-M80

生命周期状态
Discontinued
说明
Rambus DRAM, 4MX16, CMOS, PBGA74
类别
Semiconductors Memory ICs DRAMs RAMBUS DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

Technology
CMOS
Width (mm)
7.6
Access Mode
BLOCK ORIENTED PROTOCOL
Length (mm)
12.6
JESD-30 Code
R-PBGA-B74
Memory Width
16
Package Code
TFBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
RAMBUS DRAM
Operating Mode
SYNCHRONOUS
Number of Ports
1
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Additional Feature
SELF REFRESH
Memory Organization
4MX16
Number of Functions
1
Number of Terminals
74
Terminal Pitch (mm)
0.75
Number of Words Code
4M
Memory Density (bits)
67108864
Package Body Material
PLASTIC/EPOXY
Seated Height-Max (mm)
1.2
Supply Voltage-Max (V)
2.63
Supply Voltage-Min (V)
2.37
Supply Voltage-Nom (V)
2.5
Number of Words (words)
4194304