Samsung Semiconductor, Inc. KLM8G1WEMB-B0310 | 搜芯易Sourcengine

Samsung Semiconductor, Inc. KLM8G1WEMB-B0310

生命周期状态
Discontinued
说明
Flash Card, 8GX8
类别
Semiconductors Memory ICs Flash Memories FLASH CARD

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.51
SB Code
8542.32.00.50

Type
MLC NAND TYPE
Technology
CMOS
Width (mm)
11.5
Length (mm)
13
JESD-30 Code
R-PBGA-B
Memory Width
8
Package Code
BGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
FLASH CARD
Operating Mode
SYNCHRONOUS
Terminal Position
BOTTOM
Additional Feature
ALSO ORGANISED AS 64Gbx1
Memory Organization
8GX8
Number of Functions
1
Number of Words Code
8G
Memory Density (bits)
68719476736
Package Body Material
PLASTIC/EPOXY
Seated Height-Max (mm)
0.8
Supply Voltage-Nom (V)
5
Number of Words (words)
8589934592
Programming Voltage (V)
5
Clock Frequency-Max (MHz)
200