OKI ELECTRIC INDUSTRY CO LTD KGF1608 | 搜芯易Sourcengine

OKI ELECTRIC INDUSTRY CO LTD KGF1608

生命周期状态
Discontinued
说明
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Junction FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

JESD-30 Code
R-CQMW-F4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
MICROWAVE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
JUNCTION
Operating Mode
DEPLETION MODE
Terminal Position
QUAD
Number of Elements
1
Number of Terminals
4
Power Gain-Min (Gp)
9 dB
Qualification Status
Not Qualified
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
5.5 A
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Transistor Application
AMPLIFIER
DS Breakdown Voltage-Min
8 V
Operating Temperature-Max
150 Cel
Transistor Element Material
GALLIUM ARSENIDE
Power Dissipation Ambient-Max
5 W