KFM1216Q2B-DEB8T
Samsung Semiconductor, Inc.
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明Flash, 32MX16, 70ns
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.51
- SB Code8542.32.00.50
- TypeNAND TYPE
- Ready/BusyYES
- TechnologyCMOS
- Toggle BitNO
- Data PollingNO
- JESD-30 CodeR-XBGA-B63
- Memory Width16
- Package CodeFBGA
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- J-STD-609 Codee3
- Memory IC TypeFLASH
- Parallel/SerialPARALLEL
- Terminal FinishMatte Tin (Sn)
- DLA QualificationNot Qualified
- Page Size (words)1K
- Temperature GradeOTHER
- Terminal PositionBOTTOM
- Memory Organization32MX16
- Number of Terminals63
- Sector Size (words)64K
- Terminal Pitch (mm)0.8
- Access Time-Max (ns)70
- Number of Words Code32M
- Memory Density (bits)536870912
- Command User InterfaceYES
- Number of Sectors/Size512
- Supply Voltage-Nom (V)1.8
- Number of Words (words)33554432
- Programming Voltage (V)2.7
- Standby Current-Max (A)5.0E-5
- Supply Current-Max (mA)30
- Package Equivalence CodeBGA63,10X12,32
- Moisture Sensitivity Level1
- Operating Temperature-Max (Cel)85
- Operating Temperature-Min (Cel)-30
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KFM1216Q2B-DEB8T