KFK8G16Q2M-DEB8
Samsung Semiconductor, Inc.
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- 说明Flash, 512MX16, 9ns, PBGA63
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.51
- SB Code8542.32.00.50
- TypeSLC NAND TYPE
- Page Size2K words
- Ready/BusyYES
- TechnologyCMOS
- Toggle BitYES
- Sector Size64K Words
- Data PollingNO
- JESD-30 CodeR-PBGA-B63
- Memory Width16
- Organization512MX16
- Package CodeFBGA
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density8589934592 bit
- Memory IC TypeFLASH
- Terminal Pitch0.8 mm
- Access Time-Max9 ns
- Number of Words536870912 words
- Parallel/SerialPARALLEL
- Temperature GradeOTHER
- Terminal PositionBOTTOM
- Supply Current-Max35 mA
- Number of Terminals63
- Standby Current-Max0.0001 Amp
- Number of Words Code512M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Command User InterfaceYES
- Number of Sectors/Size8K
- Package Equivalence CodeBGA63,10X12,32
- Operating Temperature-Max85 Cel
- Operating Temperature-Min-30 Cel
- Supply Voltage-Nom (Vsup)1.8 V
KFK8G16Q2M-DEB8有0家供应商货源可供购买或竞价
提交询价
您的询价单将直接发送给我们的销售专家: Pari
提交询价
KFK8G16Q2M-DEB8