KFH2G16Q2M-DEB6000
Samsung Semiconductor, Inc.
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明Flash, 128MX16, 11.5ns, PBGA63
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.51
- SB Code8542.32.00.50
- TypeSLC NAND TYPE
- Page Size1K words
- Ready/BusyYES
- TechnologyCMOS
- Toggle BitNO
- Sector Size64K Words
- Data PollingNO
- JESD-30 CodeR-PBGA-B63
- Memory Width16
- Organization128MX16
- Package CodeFBGA
- JESD-609 Codee3
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density2147483648 bit
- Memory IC TypeFLASH
- Terminal Pitch0.8 mm
- Access Time-Max11.5 ns
- Number of Words134217728 words
- Parallel/SerialPARALLEL
- Terminal FinishMATTE TIN
- Temperature GradeOTHER
- Terminal PositionBOTTOM
- Supply Current-Max40 mA
- Number of Terminals63
- Standby Current-Max0.0001 Amp
- Number of Words Code128M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Command User InterfaceYES
- Number of Sectors/Size2K
- Package Equivalence CodeBGA63,10X12,32
- Operating Temperature-Max85 Cel
- Operating Temperature-Min-30 Cel
- Supply Voltage-Nom (Vsup)1.8 V
- Moisture Sensitivity Level1
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KFH2G16Q2M-DEB6000