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KFG2816Q1M-DEB

Samsung Semiconductor, Inc.

Samsung Semiconductor, Inc. KFG2816Q1M-DEB
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.51
  • SB Code
    8542.32.00.50
  • Type
    NAND TYPE
  • Ready/Busy
    YES
  • Technology
    CMOS
  • Toggle Bit
    NO
  • Data Polling
    NO
  • JESD-30 Code
    R-PBGA-B67
  • Memory Width
    16
  • Package Code
    FBGA
  • Package Shape
    RECTANGULAR
  • Package Style
    GRID ARRAY, FINE PITCH Meter
  • Surface Mount
    YES
  • Terminal Form
    BALL
  • J-STD-609 Code
    e3
  • Memory IC Type
    EEPROM CARD
  • Parallel/Serial
    PARALLEL
  • Terminal Finish
    MATTE TIN
  • DLA Qualification
    Not Qualified
  • Page Size (words)
    512
  • Temperature Grade
    OTHER
  • Terminal Position
    BOTTOM
  • Memory Organization
    8MX16
  • Number of Terminals
    67
  • Sector Size (words)
    32K
  • Terminal Pitch (mm)
    0.8
  • Access Time-Max (ns)
    14.5
  • Number of Words Code
    8M
  • Memory Density (bits)
    134217728
  • Package Body Material
    PLASTIC/EPOXY
  • Command User Interface
    YES
  • Number of Sectors/Size
    256
  • Supply Voltage-Nom (V)
    1.8
  • Number of Words (words)
    8388608
  • Programming Voltage (V)
    2.7
  • Standby Current-Max (A)
    5.0E-5
  • Supply Current-Max (mA)
    25
  • Package Equivalence Code
    BGA67,8X10,32
  • Moisture Sensitivity Level
    1
  • Operating Temperature-Max (Cel)
    85
  • Operating Temperature-Min (Cel)
    -30

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