LITE-ON SEMICONDUCTOR CORP KBP406G | 搜芯易Sourcengine

LITE-ON SEMICONDUCTOR CORP KBP406G

生命周期状态
Transferred
RoHS
符合RoHS标准
说明
Bridge Rectifier Diode, 1 Phase, 2A, 600V V(RRM), Silicon
类别
Semiconductors Diodes Bridge Rectifier Diodes BRIDGE RECTIFIER DIODE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.10.00.80
SB Code
8541.10.00.80

Diode Type
BRIDGE RECTIFIER DIODE
JESD-30 Code
R-PSIP-T4
Configuration
BRIDGE, 4 ELEMENTS
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Number of Phases
1
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
4
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Diode Element Material
SILICON
Output Current-Max (A)
2
Breakdown Voltage-Min (V)
600
Peak Reflow Temperature (Cel)
255
Rep Pk Reverse Voltage-Max (V)
600
Non-rep Pk Forward Current-Max (A)
220
Screening Level / Reference Standard
UL RECOGNIZED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED