K9F1G08R0A-XIB00
Samsung Semiconductor, Inc.
- 生命周期状态Active-Unconfirmed
- REACHREACH compliant
- 说明Flash, 128MX8, 30ns
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.51
- SB Code8542.32.00.50
- TypeSLC NAND TYPE
- TechnologyCMOS
- JESD-30 CodeR-XUUC-N
- Memory Width8
- Organization128MX8
- Package CodeDIE
- Package ShapeRECTANGULAR
- Package StyleUNCASED CHIP Meter
- Surface MountYES
- Terminal FormNO LEAD
- Memory Density1073741824 bit
- Memory IC TypeFLASH
- Operating ModeASYNCHRONOUS
- Access Time-Max30 ns
- Number of Words134217728 words
- Parallel/SerialPARALLEL
- Temperature GradeINDUSTRIAL
- Terminal PositionUPPER
- Number of Functions1
- Programming Voltage1.8 V
- Number of Words Code128M
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Operating Temperature-Max85 Cel
- Operating Temperature-Min-40 Cel
- Supply Voltage-Max (Vsup)1.95 V
- Supply Voltage-Min (Vsup)1.65 V
- Supply Voltage-Nom (Vsup)1.8 V
K9F1G08R0A-XIB00有0家供应商货源可供购买或竞价
提交询价
您的询价单将直接发送给我们的销售专家: Pari
提交询价
K9F1G08R0A-XIB00