K9F1216D0A-HIB00
Samsung Semiconductor, Inc.
- 生命周期状态Discontinued
- REACHREACH compliant
- 说明Flash, 32MX16, 30ns, PBGA63
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.51
- SB Code8542.32.00.50
- Width8.5 mm
- Length15 mm
- TechnologyCMOS
- JESD-30 CodeR-PBGA-B63
- Memory Width16
- Organization32MX16
- Package CodeVFBGA
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density536870912 bit
- Memory IC TypeFLASH
- Operating ModeASYNCHRONOUS
- Terminal Pitch0.8 mm
- Access Time-Max30 ns
- Number of Words33554432 words
- Parallel/SerialPARALLEL
- Seated Height-Max1 mm
- Temperature GradeINDUSTRIAL
- Terminal PositionBOTTOM
- Additional FeatureCONTAINS ADDITIONAL 16M BIT NAND FLASH
- Number of Functions1
- Number of Terminals63
- Programming Voltage2.7 V
- Number of Words Code32M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Operating Temperature-Max85 Cel
- Operating Temperature-Min-40 Cel
- Supply Voltage-Max (Vsup)2.9 V
- Supply Voltage-Min (Vsup)2.4 V
- Supply Voltage-Nom (Vsup)2.65 V
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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K9F1216D0A-HIB00