Samsung Semiconductor, Inc. K9F1208D0A-DIB00 | 搜芯易Sourcengine

Samsung Semiconductor, Inc. K9F1208D0A-DIB00

生命周期状态
Discontinued
REACH
REACH compliant
说明
Flash, 64MX8, 30ns, PBGA63
类别
Semiconductors Memory ICs Flash Memories FLASH

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.51
SB Code
8542.32.00.50

Width
8.5 mm
Length
15 mm
Technology
CMOS
JESD-30 Code
R-PBGA-B63
Memory Width
8
Organization
64MX8
Package Code
VFBGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory Density
536870912 bit
Memory IC Type
FLASH
Operating Mode
ASYNCHRONOUS
Terminal Pitch
0.8 mm
Access Time-Max
30 ns
Number of Words
67108864 words
Parallel/Serial
PARALLEL
Seated Height-Max
1 mm
Temperature Grade
INDUSTRIAL
Terminal Position
BOTTOM
Additional Feature
CONTAINS ADDITIONAL 16M BIT NAND FLASH
Number of Functions
1
Number of Terminals
63
Programming Voltage
2.7 V
Number of Words Code
64M
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Operating Temperature-Max
85 Cel
Operating Temperature-Min
-40 Cel
Supply Voltage-Max (Vsup)
2.9 V
Supply Voltage-Min (Vsup)
2.4 V
Supply Voltage-Nom (Vsup)
2.65 V